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US Patent 8742509 Apparatus and method for FinFETs
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Patent
Date Filed
March 1, 2012
Date of Patent
June 3, 2014
Patent Application Number
13410073
Patent Citations Received
US Patent 12132111 Formation method of semiconductor device structure with gate stacks
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US Patent 11699758 Isolation structure having different distances to adjacent FinFET devices
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US Patent 11749720 Integrated circuit structure and method with solid phase diffusion
US Patent 11749682 Selective dual silicide formation using a maskless fabrication process flow
US Patent 11855151 Multi-gate device and method of fabrication thereof
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Patent Inventor Names
Cheng-Hsien Wu
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Chih-Hsin Ko
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Yi-Jing Lee
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You-Ru Lin
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Cheng-Tien Wan
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
8742509
Patent Primary Examiner
Fernando L Toledo
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