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US Patent 8822243 Light emitting devices having light coupling layers with recessed electrodes

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Is a

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Patent attributes

Patent Applicant

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Li Yan0

Chao-kun Lin0

Chih-Wei Chuang0

Date of Patent

September 2, 2014

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Patent Application Number

141550900

Date Filed

January 14, 2014

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Patent Citations Received

US Patent 12125889 Source/drain contact with low-k contact etch stop layer and method of fabricating thereof

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US Patent 11984355 Method for manufacturing an interconnection structure having a bottom via spacer

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US Patent 12009202 Using a self-assembly layer to facilitate selective formation of an etching stop layer

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US Patent 12027415 Semiconductor device structures

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US Patent 12068167 Self-aligned double patterning

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US Patent 12073166 Method and structure for mandrel patterning

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US Patent 12074058 Patterning methods for semiconductor devices

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US Patent 11664237 Semiconductor device having improved overlay shift tolerance

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Patent Primary Examiner

Tammy Thanh Nguyen

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