Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hsin-Che Chiang0
Ju-Li Huang0
Chun-Sheng Liang0
Jeng-Ya Yeh0
Date of Patent
July 2, 2024
0Patent Application Number
178151770
Date Filed
July 26, 2022
0Patent Citations
...
Patent Primary Examiner
Patent abstract
In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.
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