US Patent 8846491 Forming a diffusion break during a RMG process

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Is a

Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8846491

Patent Inventor Names

Nicholas V. LiCausi0

Andy Wei0

Daniel Pham0

Zhenyu Hu0

Date of Patent

September 30, 2014

Patent Application Number

13921377

Date Filed

June 19, 2013

Patent Citations Received

‌

US Patent 11923248 Single diffusion cut for gate structures

‌

US Patent 12125751 Method and structure for FinFET isolation

Patent Primary Examiner

‌

Zandra Smith

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