US Patent 8921961 Storage element for STT MRAM applications

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Patent

Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

8921961

Patent Inventor Names

Ru-Ying Tong0

Guenole Jan0

Witold Kula0

Yu-Jen Wang0

Date of Patent

December 30, 2014

Patent Application Number

13617432

Date Filed

September 14, 2012

Patent Citations Received

‌

US Patent 12082509 Dual magnetic tunnel junction (DMTJ) stack design

‌

US Patent 11683994 Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio

Patent Primary Examiner

‌

Long K. Tran

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