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US Patent 8921961 Storage element for STT MRAM applications
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Patent
Date Filed
September 14, 2012
Date of Patent
December 30, 2014
Patent Application Number
13617432
Patent Citations Received
US Patent 12082509 Dual magnetic tunnel junction (DMTJ) stack design
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US Patent 11683994 Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
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Patent Inventor Names
Ru-Ying Tong
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Guenole Jan
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Witold Kula
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Yu-Jen Wang
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Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
8921961
Patent Primary Examiner
Long K. Tran
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