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US Patent 9023731 Carbon deposition-etch-ash gap fill process
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Patent
Date Filed
May 17, 2013
Date of Patent
May 5, 2015
Patent Application Number
13896729
Patent Citations Received
US Patent 12125711 Reducing roughness of extreme ultraviolet lithography resists
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US Patent 11988965 Underlayer for photoresist adhesion and dose reduction
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US Patent 12062538 Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
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US Patent 12105422 Photoresist development with halide chemistries
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US Patent 11676858 High bias deposition of high quality gapfill
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US Patent 11921427 Methods for making hard masks useful in next-generation lithography
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Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
9023731
Patent Primary Examiner
William F Kraig
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