Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
July 28, 2015
Patent Application Number
14153246
Date Filed
January 13, 2014
Patent Citations Received
Patent Primary Examiner
Patent abstract
Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.
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