US Patent 9093389 Method of patterning a silicon nitride dielectric film
Patent 9093389 was granted and assigned to Applied Materials on July, 2015 by the United States Patent and Trademark Office.
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Patent abstract
Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.
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US Patent 09093389 Method of patterning a silicon nitride dielectric film US Patent 9093389 Method of patterning a silicon nitride dielectric film
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Patent Number
0909338900
Patent Number
909338900
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
090933890
Date of Patent
July 28, 2015
0Patent Application Number
141532460
Date Filed
January 13, 2014
0Official Website
Patent Primary Examiner
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
090933890
Date of Patent
July 28, 2015
0Patent Application Number
141532460
Date Filed
January 13, 2014
0Official Website
Patent Primary Examiner
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US Patent 09093389 Method of patterning a silicon nitride dielectric film
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
09093389
Date of patent
July 28, 2015
Patent application number
14153246
Date Filed
January 13, 2014
Patent primary examiner
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