US Patent 9224833 Method of forming a vertical device

According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes the following operations: providing a vertical structure over a substrate; forming a first dielectric layer over the vertical structure and the substrate; laterally etching a sidewall of the first dielectric layer; replacing a portion of the first dielectric layer over the vertical structure with a second dielectric layer; and etching a portion of the first dielectric layer to expose the lateral surface of the vertical structure.