Patent attributes
A fin stack structure is provided on an insulator layer. The fin stack structure comprises, from bottom to top, a first semiconductor fin portion, a dielectric fin portion, a second semiconductor fin portion and a hard mask fin portion. A sacrificial gate structure is formed on a portion of the fin stack structure. The hard mask fin portion and the dielectric fin portion not located beneath the sacrificial gate structure are removed. An epitaxial semiconductor material structure is then formed from exposed surfaces of each semiconductor fin portion. The sacrificial gate structure is then removed. Next, remaining portions of the hard mask fin portion and the dielectric fin portion are removed. The insulating layer is then recessed. After recessing the insulator layer, the first and second semiconductor fin portions are suspended and are stacked one atop the other.
