Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Peter Rabkin0
Johann Alsmeier0
Masaaki Higashitani0
Jayavel Pachamuthu0
Date of Patent
September 20, 2016
0Patent Application Number
147215360
Date Filed
May 26, 2015
0Patent Citations Received
Patent Primary Examiner
0
Patent abstract
A non-volatile storage device with memory cells having a high-k charge storage region, as well as methods of fabrication, is disclosed. The charge storage region has three or more layers of dielectric materials. At least one layer is a high-k material. The high-k layer(s) has a higher trap density as compared to Si3N4. High-k dielectrics in the charge storage region enhance capacitive coupling with the memory cell channel, which can improve memory cell current, program speed, and erase speed. The charge storage region has a high-low-high conduction band offset, which may improve data retention. The charge storage region has a low-high-low valence band offset, which may improve erase.
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