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US Patent 9564489 Multiple gate field-effect transistors having oxygen-scavenged gate stack

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US Patent 12136600 Grounded metal ring structure for through-silicon via
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US Patent 12132112 Work function control in gate structures
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US Patent 12132100 Profile control in forming epitaxy regions for transistors
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US Patent 12132091 Work function layers for transistor gate electrodes
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US Patent 12132050 Semiconductor structure cutting process and structures formed thereby
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US Patent 12131955 Gate structures for semiconductor devices
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US Patent 12131911 CMP process and methods thereof
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edited on 24 Oct, 2024
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US Patent 12125891 Semiconductor device having gate spacers extending below a fin top surface
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edited on 9 Oct, 2024
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US Patent 12113116 Semiconductor device and manufacturing method thereof
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edited on 9 Oct, 2024
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edited on 19 Sep, 2024
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US Patent 12094757 Method for manufacturing semiconductor device with semiconductor capping layer
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edited on 11 Sep, 2024
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US Patent 12087845 System and methods of manufacturing semiconductor devices
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edited on 4 Sep, 2024
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US Patent 12080761 Fully strained channel
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edited on 29 Aug, 2024
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US Patent 12074028 Semiconductor device and manufacturing method thereof
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edited on 21 Aug, 2024
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US Patent 12068414 Interface profile control in epitaxial structures for semiconductor devices
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edited on 21 Aug, 2024
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US Patent 12068388 Semiconductor device and method of manufacture
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US Patent 12062576 Semiconductor devices with a rare earth metal oxide layer
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edited on 7 Aug, 2024
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