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US Patent 9659963 Contact formation to 3D monolithic stacked FinFETs

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
June 29, 2015
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Date of Patent
May 23, 2017
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Patent Application Number
14753908
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Patent Citations Received
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US Patent 12094937 Stacked field effect transistor devices with replacement gate
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US Patent 12087770 Complementary field effect transistor devices
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US Patent 11710699 Complementary FET (CFET) buried sidewall contact with spacer foot
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US Patent 11756961 Staggered stacked vertical crystalline semiconducting channels
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US Patent 11978796 Contact and isolation in monolithically stacked VTFET
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US Patent 11894303 Circuit wiring techniques for stacked transistor structures
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US Patent 11862452 Contact isolation in semiconductor devices
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US Patent 11894433 Method and structure to improve stacked FET bottom EPI contact
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US Patent 11916073 Stacked complementary field effect transistors
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US Patent 11935929 High aspect ratio shared contacts
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Patent Inventor Names
Ali Khakifirooz
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Alexander Reznicek
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Kangguo Cheng
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Pouya Hashemi
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9659963
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Patent Primary Examiner
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Eduardo A Rodela
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