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US Patent 9960142 Hybrid bonding with air-gap structure

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
March 16, 2016
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Date of Patent
May 1, 2018
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Patent Application Number
15071576
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Patent Citations Received
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US Patent 12136605 Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics and method for forming the same
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US Patent 12080672 Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
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US Patent 12113056 Stacked dies and methods for forming bonded structures
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US Patent 12113054 Non-volatile dynamic random access memory
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US Patent 12125784 Interconnect structures
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US Patent 12132020 Low temperature bonded structures
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US Patent 11658173 Stacked dies and methods for forming bonded structures
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US Patent 11664357 Techniques for joining dissimilar materials in microelectronics
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US Patent 11670615 Bonded structures
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US Patent 11694925 Diffusion barrier collar for interconnects
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•••
Patent Inventor Names
Dun-Nian Yaung
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Szu-Ying Chen
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
9960142
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Patent Primary Examiner
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Victoria K. Hall
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