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US Patent 10026824 Air-gap gate sidewall spacer and method
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Patent
Date Filed
January 18, 2017
Date of Patent
July 17, 2018
Patent Application Number
15408540
Patent Citations Received
US Patent 12107149 Air spacer and method of forming same
0
US Patent 11430876 Method for producing self-aligned gate and source/drain via connections for contacting a FET transistor
US Patent 11929419 Semiconductor device
0
US Patent 12068201 Semiconductor devices
0
US Patent 10211092 Transistor with robust air spacer
US Patent 10522632 Semiconductor structure and fabrication method thereof
US Patent 11569356 Scaled gate contact and source/drain cap
US Patent 10872965 Method of forming semiconductor structure
US Patent 10892338 Scaled gate contact and source/drain cap
US Patent 11011638 Transistor having airgap spacer around gate structure
•••
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
10026824
Patent Primary Examiner
Bac Au
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