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US Patent 10074727 Low resistivity wrap-around contacts

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
September 29, 2016
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Date of Patent
September 11, 2018
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Patent Application Number
15280226
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Patent Citations Received
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US Patent 11869893 Stacked field effect transistor with wrap-around contacts
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US Patent 10559685 Vertical field effect transistor with reduced external resistance
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US Patent 10566248 Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar
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US Patent 10833168 Complementary metal-oxide-semiconductor (CMOS) nanosheet devices with epitaxial source/drains and replacement metal gate structures
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US Patent 10916649 Vertical field effect transistor with reduced external resistance
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US Patent 10950610 Asymmetric gate cut isolation for SRAM
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US Patent 11004984 Low resistivity epitaxially formed contact region for nanosheet external resistance reduction
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US Patent 11398480 Transistor having forked nanosheets with wraparound contacts
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US Patent 11521894 Partial wrap around top contact
Patent Inventor Names
Adra V. Carr
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Oscar van der Straten
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Praneet Adusumilli
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Alexander Reznicek
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10074727
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Patent Primary Examiner
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Bo Fan
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