US Patent 10090161 Plasma etching apparatus and plasma etching method
Patent 10090161 was granted and assigned to Tokyo Electron on October, 2018 by the United States Patent and Trademark Office.
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A plasma etching apparatus performs plasma etching on a substrate having a resist pattern formed thereon and an outer edge portion where the substrate surface is exposed. The plasma etching apparatus includes a support part that supports the substrate, a cover member that covers the outer edge portion of the substrate and prevents plasma from coming around the outer edge portion, and a control unit that generates plasma by controlling high frequency power application and supply of a processing gas for etching, and uses the generated plasma to etch the substrate that is supported by the support part and has the outer edge portion covered by the cover member. After etching the substrate, the control unit generates plasma by controlling high frequency power application and supply of a processing gas for ashing, and uses the generated plasma to perform ashing on the resist pattern on the etched substrate.
US Patent 10090161 Plasma etching apparatus and plasma etching method
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