Is a
Patent attributes
Patent Applicant
Patent Jurisdiction
Patent Number
Patent Inventor Names
Noriyuki Isobe0
Hirohisa Yamazaki0
Hiroshi Ashihara0
Date of Patent
May 21, 2019
Patent Application Number
15275854
Date Filed
September 26, 2016
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.
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