US Patent 10586765 Buried power rails
Patent 10586765 was granted and assigned to Tokyo Electron on March, 2020 by the United States Patent and Trademark Office.
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Patent abstract
Aspects of the disclosure provide a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a power rail formed in an isolation trench. The power rail is covered by a dielectric cap that isolates the power rail from conductive pattern structures on the dielectric cap. Further, an opening is selectively formed in the dielectric cap and is filled with conductive material to selectively connect a conductive pattern structure with the power rail.
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Patent Inventor Names
Anton J. Devilliers0
Jeffrey Smith0
Kandabara Tapily0
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US Patent 10586765 Buried power rails
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Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
10586765
Date of patent
March 10, 2020
Patent application number
16011377
Date Filed
June 18, 2018
Patent citations
Patent primary examiner
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