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US Patent 10892338 Scaled gate contact and source/drain cap

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
October 24, 2018
Date of Patent
January 12, 2021
Patent Application Number
16169269
Patent Citations
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US Patent 10083863 Contact structure for semiconductor device
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US Patent 10236215 Methods of forming gate contact structures and cross-coupled contact structures for transistor devices
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US Patent 10236364 Tunnel transistor
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US Patent 10243053 Gate contact structure positioned above an active region of a transistor device
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US Patent 10347541 Active gate contacts and method of fabrication thereof
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US Patent 10388770 Gate and source/drain contact structures positioned above an active region of a transistor device
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US Patent 10522632 Semiconductor structure and fabrication method thereof
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US Patent 10431495 Semiconductor device with local connection
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US Patent 10529826 Forming self-aligned gate and source/drain contacts using sacrificial gate cap spacer and resulting devices
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US Patent 10529704 Auxiliary gate antenna diodes
•••
Patent Citations Received
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US Patent 11569356 Scaled gate contact and source/drain cap
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10892338
Patent Primary Examiner
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Sophia T Nguyen

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