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US Patent 11056390 Structures and methods for reliable packages

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
December 18, 2019
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Date of Patent
July 6, 2021
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Patent Application Number
16718820
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Patent Citations
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US Patent 10446456 Integrated circuits protected by substrates with cavities, and methods of manufacture
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US Patent 10008844 Cable seal
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US Patent 10026605 Method of reducing residual contamination in singulated semiconductor die
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US Patent 10075657 Edgeless large area camera system
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US Patent 10269756 Die processing
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US Patent 10204893 Stacked dies and methods for forming bonded structures
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US Patent 10276619 Semiconductor device structure with a conductive feature passing through a passivation layer
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US Patent 10276909 Structure comprising at least a first element bonded to a carrier having a closed metallic channel waveguide formed therein
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US Patent 10727219 Techniques for processing devices
Patent Citations Received
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US Patent 12113056 Stacked dies and methods for forming bonded structures
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US Patent 11476213 Bonded structures without intervening adhesive
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US Patent 11538781 Integrated device packages including bonded structures
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US Patent 11955463 Direct bonded stack structures for increased reliability and improved yield in microelectronics
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US Patent 11967575 Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes
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US Patent 12068278 Processed stacked dies
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US Patent 12080672 Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
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US Patent 11462419 Microelectronic assemblies
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US Patent 11631647 Integrated device packages with integrated device die and dummy element
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US Patent 11652083 Processed stacked dies
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•••
Patent Inventor Names
Liang Wang
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Cyprian Emeka Uzoh
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Guilian Gao
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Hong Shen
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Arkalgud R. Sitaram
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11056390
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Patent Primary Examiner
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Sheikh Maruf
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