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US Patent 11437269 Tungsten feature fill with nucleation inhibition

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
June 28, 2019
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Date of Patent
September 6, 2022
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Patent Application Number
16457353
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Patent Citations
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US Patent 10211099 Chamber conditioning for remote plasma process
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US Patent 10242879 Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
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US Patent 10256142 Tungsten feature fill with nucleation inhibition
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US Patent 10573522 Method for preventing line bending during metal fill process
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US Patent 10580654 Feature fill with multi-stage nucleation inhibition
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US Patent 10580695 Feature fill with nucleation inhibition
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US Patent 10916434 Feature fill with multi-stage nucleation inhibition
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US Patent 11075115 Tungsten feature fill
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US Patent 11355345 Method for preventing line bending during metal fill process
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US Patent 10103058 Tungsten feature fill
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Patent Citations Received
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US Patent 11978666 Void free low stress fill
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Patent Inventor Names
Jasmine Lin
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Tsung-Han Yang
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Anand Chandrashekar
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11437269
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Patent Primary Examiner
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Julio J Maldonado
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CPC Code
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H01L 21/0234
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H01L 21/76855
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H01L 21/78
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H01L 21/043
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H01L 21/0485
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H01L 51/105
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H01L 28/56
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H01L 23/53223
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H01L 23/53238
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H01L 23/53266
0
•••

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