Patent 11652136 was granted and assigned to Taiwan Semiconductor Manufacturing Company on May, 2023 by the United States Patent and Trademark Office.
A semiconductor arrangement is provided. The semiconductor arrangement includes a molding layer and a first capacitor. The first capacitor includes a first vertical conductive structure within the molding layer, a second vertical conductive structure within the molding layer, and a first high-k dielectric material between the first vertical conductive structure and the second vertical conductive structure.