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US Patent 11652161 Nanosheet channel-to-source and drain isolation

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
June 11, 2021
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Date of Patent
May 16, 2023
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Patent Application Number
17345339
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Patent Citations
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US Patent 10249738 Nanosheet channel-to-source and drain isolation
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US Patent 10615269 Nanosheet channel-to-source and drain isolation
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US Patent 10727315 Nanosheet transistor
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US Patent 10832907 Gate-all-around field-effect transistor devices having source/drain extension contacts to channel layers for reduced parasitic resistance
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US Patent 11043581 Nanosheet channel-to-source and drain isolation
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US Patent 10879379 Multi-gate device and related methods
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US Patent 11049953 Nanosheet transistor
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US Patent 9331146 Silicon nanowire formation in replacement metal gate process
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US Patent 10243061 Nanosheet transistor
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Patent Inventor Names
Sean Teehan
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Eric R. Miller
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Fee Li Lie
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John R. Sporre
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Kangguo Cheng
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Marc A. Bergendahl
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11652161
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Patent Primary Examiner
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Laura M Menz
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CPC Code
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H01L 29/6681
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H01L 21/31111
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H01L 21/76224
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