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US Patent 11664315 Structure with interconnection die and method of making same

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Is a
Patent
Patent
0

Patent attributes

Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
116643150
Date of Patent
May 30, 2023
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Patent Application Number
171994120
Date Filed
March 11, 2021
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Patent Citations
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US Patent 9263511 Package with metal-insulator-metal capacitor and method of manufacturing the same
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US Patent 9281254 Methods of forming integrated circuit package
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US Patent 9368460 Fan-out interconnect structure and method for forming same
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US Patent 9372206 Testing of semiconductor chips with microbumps
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US Patent 9496189 Stacked semiconductor devices and methods of forming same
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US Patent 9966360 Semiconductor package and manufacturing method thereof
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US Patent 11417587 Package structure and method of fabricating the same
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US Patent 11322471 Semiconductor package structures, semiconductor device packages and methods of manufacturing the same
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...
Patent Primary Examiner
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Nathan W Ha
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CPC Code
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H01L 23/481
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H01L 24/08
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H01L 24/80
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H01L 23/5381
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H01L 25/0652
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H01L 25/0655
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H01L 24/96
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H01L 23/3107
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A structure including a first die, a second die, a first insulating encapsulant, an interconnection die, and a second insulating encapsulant is provided. The first die includes a first bonding structure. The first bonding structure includes a first dielectric layer and a first conductive pad embedded in the first dielectric layer. The second die includes a second bonding structure. The second bonding structure includes a second dielectric layer and a second conductive pad embedded in the second dielectric layer. The first insulating encapsulant laterally encapsulates the first die and the second die. The interconnection die includes a third bonding structure. The third bonding structure includes a third dielectric layer and third conductive pads embedded in the third dielectric layer. The second insulating encapsulant laterally encapsulates the interconnection die. The third bonding structure is in contact with the first bonding structure and the second bonding structure.

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