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US Patent 11670718 Semiconductor device structure with inner spacer
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Patent
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Current Assignee
Taiwan Semiconductor Manufacturing Company
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Date Filed
March 7, 2022
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Date of Patent
June 6, 2023
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17688305
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Patent Citations
US Patent 10243061 Nanosheet transistor
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11670718
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Patent Primary Examiner
David C Spalla
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CPC Code
H01L 29/66439
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H01L 29/6653
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H01L 29/66553
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H01L 29/6656
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H01L 29/66636
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H01L 29/66795
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H01L 29/6681
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H01L 29/775
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H01L 29/7848
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H01L 29/785
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