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US Patent 11675962 Vertex-based OPC for opening patterning
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Current Assignee
Taiwan Semiconductor Manufacturing Company
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Date Filed
April 4, 2022
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Date of Patent
June 13, 2023
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17712974
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Patent Citations
US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9594862 Method of fabricating an integrated circuit with non-printable dummy features
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US Patent 9679100 Environmental-surrounding-aware OPC
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US Patent 9865542 Interconnect structure with misaligned metal lines coupled using different interconnect layer
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US Patent 9870443 Method and apparatus for integrated circuit mask patterning
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US Patent 10816893 Method and system for correction of optical proximity effect
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US Patent 10534255 Method of applying vertex based corrections to a semiconductor design
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US Patent 7600212 Method of compensating photomask data for the effects of etch and lithography processes
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US Patent 7849423 Method of verifying photomask data based on models of etch and lithography processes
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US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same
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•••
Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11675962
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Patent Primary Examiner
Leigh M. Garbowski
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