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US Patent 11683924 Memory device and manufacturing method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
March 18, 2022
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Date of Patent
June 20, 2023
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Patent Application Number
17698929
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Patent Citations
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US Patent 9117500 Memory write assist
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9443769 Wrap-around contact
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US Patent 9548366 Self aligned contact scheme
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9640540 Structure and method for an SRAM circuit
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US Patent 9761302 Static random access memory cell and manufacturing method thereof
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US Patent 9831183 Contact structure and method of forming
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US Patent 10050045 SRAM cell with balanced write port
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US Patent 9859386 Self aligned contact scheme
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11683924
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Patent Primary Examiner
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Han Yang
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CPC Code
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G11C 14/0063
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G11C 14/0072
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G11C 14/0081
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G11C 11/412
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G11C 11/419
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H01L 27/1104
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G11C 14/0054
0

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