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US Patent 11791398 Nano multilayer carbon-rich low-k spacer
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Patent
Date Filed
December 29, 2020
Date of Patent
October 17, 2023
Patent Application Number
17136169
Patent Citations
US Patent 8357608 Multi component dielectric layer
US Patent 8779600 Interlevel dielectric stack for interconnect structures
US Patent 9123727 Airgap interconnect with hood layer and method of forming
US Patent 9882022 Method for manufacturing transistor with SiCN/SiOCN multilayer spacer
US Patent 9768024 Multi-layer mask and method of forming same
US Patent 9935002 Conformal low temperature hermetic dielectric diffusion barriers
US Patent 7763979 Organic insulating film, manufacturing method thereof, semiconductor device using such organic insulating film and manufacturing method thereof
US Patent 7879683 Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay
Patent Inventor Names
Son Nguyen
Eric Miller
Richard A. Conti
Thomas J. Haigh, Jr.
Donald Canaperi
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11791398
Patent Primary Examiner
Thanhha S. Pham
CPC Code
H01L 21/02274
H01L 29/41775
H01L 29/41791
H01L 21/02211
H01L 29/66795
H01L 29/785
H01L 21/76897
H01L 29/66568
H01L 21/02203
H01L 21/02167
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