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US Patent 11855176 FinFET structure with doped region

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
August 17, 2020
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Date of Patent
December 26, 2023
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Patent Application Number
16995253
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Patent Citations
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US Patent 8963258 FinFET with bottom SiGe layer in source/drain
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US Patent 9093530 Fin structure of FinFET
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9214555 Barrier layer for FinFET channels
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9520482 Method of cutting metal gate
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same
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US Patent 8815712 Method for epitaxial re-growth of semiconductor region
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Patent Inventor Names
Kuo-Feng Yu
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Shih-Chieh Chang
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Cheng-Yi Peng
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Chun-Hsiung Tsai
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Shahaji B. More
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11855176
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Patent Primary Examiner
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Robert G Bachner
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CPC Code
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H01L 2029/7858
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H01L 29/41791
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H01L 29/7834
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H01L 29/7836
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H01L 29/66492
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H01L 29/0847
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H01L 29/7833
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H01L 2029/7857
0

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