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US Patent 11876114 Airgap gate spacer
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Patent
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Date Filed
September 7, 2021
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Date of Patent
January 16, 2024
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Patent Application Number
17467524
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Patent Citations
US Patent 10446653 Transistor-based semiconductor device with air-gap spacers and gate contact over active area
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US Patent 10679906 Method of forming nanosheet transistor structures with reduced parasitic capacitance and improved junction sharpness
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US Patent 10840351 Transistor with airgap spacer and tight gate pitch
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US Patent 10886378 Method of forming air-gap spacers and gate contact over active region and the resulting device
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US Patent 11011638 Transistor having airgap spacer around gate structure
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US Patent 11031485 Transistor with airgap spacer
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US Patent 9368572 Vertical transistor with air-gap spacer
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US Patent 9305835 Formation of air-gap spacer in transistor
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US Patent 7741663 Air gap spacer formation
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US Patent 10008577 Methods of forming an air-gap spacer on a semiconductor device and the resulting device
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•••
Patent Inventor Names
Ruilong Xie
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Chanro Park
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Julien Frougier
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Kangguo Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11876114
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Patent Primary Examiner
Sonya McCall-Shepard
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CPC Code
H01L 21/823828
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H01L 21/823814
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H01L 29/41783
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H01L 29/6656
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H01L 29/6653
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H01L 29/0653
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H01L 29/4991
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H01L 21/76802
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H01L 21/764
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H01L 21/7682
0
•••
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