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US Patent 11913121 Fabrication method of substrate having electrical interconnection structures

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
119131210
Patent Inventor Names
Chun-Hung Lu0
Po-Yi Wu0
Date of Patent
February 27, 2024
0
Patent Application Number
169919990
Date Filed
August 12, 2020
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Patent Citations
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US Patent 9903024 Substrate having electrical interconnection structures and fabrication method thereof
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US Patent 8901736 Strength of micro-bump joints
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US Patent 9706652 Printed circuit board and method for manufacturing same
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US Patent 6878633 Flip-chip structure and method for high quality inductors and transformers
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US Patent 7250362 Solder bump structure and method for forming the same
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US Patent 7341949 Process for forming lead-free bump on electronic component
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US Patent 7915088 Wiring board manufacturing method, semiconductor device manufacturing method and wiring board
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US Patent 7960270 Method for fabricating circuit component
0
...
Patent Primary Examiner
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Minh N Trinh
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CPC Code
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H01L 2224/11
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H01L 21/4857
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C23F 1/00
0
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H01L 2224/16225
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H01L 21/486
0
Patent abstract

A method for fabricating a substrate having an electrical interconnection structure is provided, which includes the steps of: providing a substrate body having a plurality of conductive pads and first and second passivation layers sequentially formed on the substrate body and exposing the conductive pads; forming a seed layer on the second passivation layer and the conductive pads; forming a first metal layer on each of the conductive pads, wherein the first metal layer is embedded in the first and second passivation layers without being protruded from the second passivation layer; and forming on the first metal layer a second metal layer protruded from the second passivation layer. As such, when the seed layer on the second passivation layer is removed by etching using an etchant, the etchant will not erode the first metal layer, thereby preventing an undercut structure from being formed underneath the second metal layer.

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