Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Koichi Motoyama0
Chanro Park0
Ekmini Anuja De Silva0
Dominik Metzler0
Hsueh-Chung Chen0
Date of Patent
March 5, 2024
0Patent Application Number
174754630
Date Filed
September 15, 2021
0Patent Citations
Patent Primary Examiner
Patent abstract
A method of via formation including forming a sacrificial mask over a conductive layer, forming a plurality of pillars in the sacrificial mask and the conductive layer, wherein each pillar of the plurality of pillars includes a sacrificial cap and a first conductive via, depositing a spacer between the plurality of pillars, masking at least one of the sacrificial caps, removing at least one of the sacrificial caps to create openings, forming second conductive vias in the openings, and depositing a dielectric coplanar to a top surface of the second conductive vias.
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