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US Patent 11923414 Semiconductor device and method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
June 15, 2022
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Date of Patent
March 5, 2024
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Patent Application Number
17841217
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Patent Citations
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9425279 Semiconductor device including high-K metal gate having reduced threshold voltage variation
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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US Patent 9520482 Method of cutting metal gate
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US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 10510620 Work function metal patterning for N-P space between active nanostructures
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•••
Patent Inventor Names
Ji-Cheng Chen
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Hsin-Yi Lee
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Chi On Chui
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11923414
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Patent Primary Examiner
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Changhyun Yi
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CPC Code
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H01L 29/42392
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H01L 21/3215
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H01L 21/28176
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H01L 21/823842
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H01L 27/092
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H01L 29/775
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H01L 29/78696
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H01L 29/517
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H01L 29/4966
0
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H01L 29/0673
0
•••

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