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US Patent 11942390 Thermal dissipation in semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
June 6, 2022
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Date of Patent
March 26, 2024
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Patent Application Number
17833288
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Patent Citations
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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US Patent 9502265 Vertical gate all around (VGAA) transistors and methods of forming the same
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US Patent 9520482 Method of cutting metal gate
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US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9812580 Deep trench active device with backside body contact
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US Patent 9640531 Semiconductor device, structure and methods
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•••
Patent Inventor Names
Yu-Hsiang Chen
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Chii-Ping Chen
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Wen-Sheh Huang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11942390
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Patent Primary Examiner
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Dao H Nguyen
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CPC Code
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H01L 23/5286
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H01L 21/823821
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H01L 21/823871
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H01L 21/823475
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H01L 27/0922
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H01L 27/0924
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H01L 28/10
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H01L 29/0673
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H01L 29/66545
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H01L 29/66795
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•••

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