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US Patent 11950401 Two-port SRAM cells with asymmetric M1 metalization

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
July 29, 2022
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Date of Patent
April 2, 2024
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Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Application Number
17877317
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Patent Citations
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US Patent 9024392 Multi-port SRAM manufacturing
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US Patent 7233032 SRAM device having high aspect ratio cell boundary
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US Patent 8144540 Two-port 8T SRAM design
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US Patent 9892781 Cell structure for dual-port static random access memory
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US Patent 10128253 Two-port SRAM structure
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US Patent 11488969 Two-port SRAM cells with asymmetric M1 metalization
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US Patent 9257439 Structure and method for FinFET SRAM
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US Patent 9640540 Structure and method for an SRAM circuit
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US Patent 9672903 Two-port SRAM connection structure
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Patent Inventor Names
Jhon Jhy Liaw
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11950401
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Patent Primary Examiner
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Changhyun Yi
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CPC Code
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G11C 11/412
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H01L 29/41775
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H01L 27/0924
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H01L 27/1108
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H01L 27/11
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H01L 29/0665
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H01L 29/41733
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H01L 29/41791
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H01L 29/78618
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G11C 8/16
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