US Patent 11979971 EUV light source and apparatus for lithography
Patent 11979971 was granted and assigned to Taiwan Semiconductor Manufacturing Company on May, 2024 by the United States Patent and Trademark Office.
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US Patent 11979971 EUV light source and apparatus for lithography
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Patent abstract
An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chun-Lin Chang0
Han-Lung Chang0
Li-Jui Chen0
Po-Chung Cheng0
Yen-Shuo Su0
Date of Patent
May 7, 2024
0Patent Application Number
163804230
Date Filed
April 10, 2019
0Patent Citations
Patent Primary Examiner
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