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US Patent 12094711 Tin oxide films in semiconductor device manufacturing

Patent 12094711 was granted and assigned to Lam Research on September, 2024 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Current Assignee
Lam Research
Lam Research
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Date Filed
February 10, 2022
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Date of Patent
September 17, 2024
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Patent Applicant
Lam Research
Lam Research
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Patent Application Number
17650551
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Patent Citations
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US Patent 8747964 Ion-induced atomic layer deposition of tantalum
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US Patent 7459732 Gas-sensitive field-effect transistor with air gap
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US Patent 8163094 Method to improve indium bump bonding via indium oxide removal using a multi-step plasma process
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US Patent 8435608 Methods of depositing smooth and conformal ashable hard mask films
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US Patent 9996004 EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
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US Patent 10546748 Tin oxide films in semiconductor device manufacturing
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US Patent 10665501 Deposition of Aluminum oxide etch stop layers
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US Patent 11031245 Tin oxide thin film spacers in semiconductor device manufacturing
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US Patent 11088019 Method to create air gaps
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US Patent 11183383 Tin oxide thin film spacers in semiconductor device manufacturing
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•••
Patent Inventor Names
Samantha S. H. Tan
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Yang Pan
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Hui-Jung Wu
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Boris Volosskiy
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Nader Shamma
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Richard Wise
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Yu Jiang
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Jengyi Yu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12094711
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Patent Primary Examiner
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Allan W. Olsen
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