US Patent 12094711 Tin oxide films in semiconductor device manufacturing
Patent 12094711 was granted and assigned to Lam Research on September, 2024 by the United States Patent and Trademark Office.
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US Patent 12094711 Tin oxide films in semiconductor device manufacturing
Article
Patent abstract
Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Boris Volosskiy0
Hui-Jung Wu0
Jengyi Yu0
Nader Shamma0
Richard Wise0
Samantha S. H. Tan0
Yang Pan0
Yu Jiang0
Date of Patent
September 17, 2024
0Patent Application Number
176505510
Date Filed
February 10, 2022
0Patent Citations
Patent Primary Examiner
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