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US Patent 9053279 Pattern modification with a preferred position function
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Patent
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Date Filed
October 21, 2013
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Date of Patent
June 9, 2015
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Patent Application Number
14059210
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Patent Citations Received
US Patent 12125889 Source/drain contact with low-k contact etch stop layer and method of fabricating thereof
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US Patent 11996297 Method of manufacturing a semiconductor device
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US Patent 12027415 Semiconductor device structures
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US Patent 12068167 Self-aligned double patterning
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US Patent 12073166 Method and structure for mandrel patterning
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US Patent 12074058 Patterning methods for semiconductor devices
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US Patent 11676821 Self-aligned double patterning
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US Patent 11699737 Integrated circuit with doped low-k side wall spacers for gate spacers
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US Patent 11749677 Semiconductor structure and methods of forming the same
US Patent 11784056 Self-aligned double patterning
•••
Patent Inventor Names
Ken-Hsien Hsieh
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Shih-Ming Chang
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
9053279
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Patent Primary Examiner
Paul Dinh
0
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