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Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
September 22, 2015
Patent Application Number
13664796
Date Filed
October 31, 2012
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
The embodiments of diffusion barrier layer described above provide mechanisms for forming a copper diffusion barrier layer to prevent device degradation for hybrid bonding of wafers. The diffusion barrier layer(s) encircles the copper-containing conductive pads used for hybrid bonding. The diffusion barrier layer can be on one of the two bonding wafers or on both bonding wafers.
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