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US Patent 10018920 Lithography patterning with a gas phase resist

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
March 4, 2016
Date of Patent
July 10, 2018
Patent Application Number
15061860
Patent Citations Received
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US Patent 11296189 Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
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US Patent 11289326 Method for reforming amorphous carbon polymer film
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US Patent D947913 Susceptor shaft
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US Patent 11295980 Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
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US Patent 11227782 Vertical batch furnace assembly
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US Patent 11227789 Method and apparatus for filling a recess formed within a substrate surface
‌
US Patent 10276830 Organic electroluminescent device and method for producing same
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US Patent 11230766 Substrate processing apparatus and method
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US Patent 11232963 Substrate processing apparatus and method
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US Patent 11233133 NbMC layers
•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10018920
Patent Primary Examiner
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Amanda C. Walke

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