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US Patent 10461152 Radio frequency switches with air gap structures

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 10, 2017
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Date of Patent
October 29, 2019
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Patent Application Number
15645655
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Patent Citations
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US Patent 10062757 Semiconductor device with buried metallic region, and method for manufacturing the semiconductor device
Patent Citations Received
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US Patent 12027580 Semiconductor on insulator wafer with cavity structures
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US Patent 11056382 Cavity formation within and under semiconductor devices
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US Patent 11605710 Transistor with air gap under source/drain region in bulk semiconductor substrate
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US Patent 11764258 Airgap isolation structures
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US Patent 11410872 Oxidized cavity structures within and under semiconductor devices
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US Patent 11862693 Semiconductor devices including a drain captive structure having an air gap and methods of forming the same
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US Patent 11881506 Gate structures with air gap isolation features
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US Patent 11488980 Wafer with localized semiconductor on insulator regions with cavity structures
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US Patent 11545577 Semiconductor structure with in-device high resistivity polycrystalline semiconductor element and method
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US Patent 10903316 Radio frequency switches with air gap structures
•••
Patent Inventor Names
Siva P. Adusumilli
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Steven M. Shank
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Anthony K. Stamper
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John J. Ellis-Monaghan
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
10461152
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Patent Primary Examiner
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Jarrett J Stark
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