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US Patent 10522642 Semiconductor device with air-spacer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
Date Filed
June 15, 2017
Date of Patent
December 31, 2019
Patent Application Number
15623539
Patent Citations Received
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US Patent 12094952 Air spacer formation with a spin-on dielectric material
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US Patent 11665916 Memory devices and methods for forming the same
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US Patent 11302798 Semiconductor devices with air gate spacer and air gate cap
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US Patent 11784228 Process and structure for source/drain contacts
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US Patent 11362193 Inverse T-shaped contact structures having air gap spacers
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US Patent 11417750 Gate air spacer for fin-like field effect transistor
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US Patent 11855161 Semiconductor device contact structures and methods of fabricating thereof
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US Patent 12027606 Semiconductor devices with air gate spacer and air gate cap
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US Patent 10892235 Die seal ring and manufacturing method thereof
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US Patent 11069579 Semiconductor device and method
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•••
Patent Inventor Names
Chung-Te Lin
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Feng-Cheng Yang
0
Wei-Yang Lee
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Yen-Ming Chen
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10522642
Patent Primary Examiner
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Nilufa Rahim

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