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US Patent 11355699 Precessional spin current structure for MRAM

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
March 13, 2020
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Date of Patent
June 7, 2022
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Patent Application Number
16818472
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Patent Citations
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US Patent 10032978 MRAM with reduced stray magnetic fields
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US Patent 10229724 Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
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US Patent 10236047 Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
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US Patent 10236048 AC current write-assist in orthogonal STT-MRAM
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US Patent 10236439 Switching and stability control for perpendicular magnetic tunnel junction device
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US Patent 10270027 Self-generating AC current assist in orthogonal STT-MRAM
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US Patent 10360961 AC current pre-charge write-assist in orthogonal STT-MRAM
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US Patent 10468588 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
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US Patent 10468590 High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
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US Patent 10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
•••
Patent Inventor Names
Mustafa Pinarbasi
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Bartlomiej Adam Kardasz
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11355699
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Patent Primary Examiner
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Nelson Garces
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CPC Code
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H01L 43/12
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H01L 29/66984
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H01L 43/02
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H03B 15/006
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G02F 2203/16
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G11C 11/161
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H01L 43/08
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H01L 43/10
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