US Patent 11355699 Precessional spin current structure for MRAM

US Patent 10008248 Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque

US Patent 10026892 Precessional spin current structure for MRAM

US Patent 10032978 MRAM with reduced stray magnetic fields

US Patent 10229724 Microwave write-assist in series-interconnected orthogonal STT-MRAM devices

US Patent 10236047 Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM

US Patent 10236048 AC current write-assist in orthogonal STT-MRAM

US Patent 10236439 Switching and stability control for perpendicular magnetic tunnel junction device

US Patent 10270027 Self-generating AC current assist in orthogonal STT-MRAM

US Patent 10360961 AC current pre-charge write-assist in orthogonal STT-MRAM

US Patent 10468588 Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer

US Patent 10468590 High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory

US Patent 10580827 Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching

US Patent 10615335 Spin transfer torque structure for MRAM devices having a spin current injection capping layer

US Patent 10643680 Memory cell having magnetic tunnel junction and thermal stability enhancement layer

US Patent 10672876 Field-effect transistor having a bypass electrode connected to the gate electrode connection section

US Patent 10672976 Precessional spin current structure with high in-plane magnetization for MRAM

US Patent 10777736 Polishing stop layer(s) for processing arrays of semiconductor elements

H01L 29/66984

G02F 2203/16

H03B 15/006

H01L 43/12

H01L 43/10

H01L 43/08

H01L 43/02

G11C 11/161