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US Patent 11688632 Semiconductor device with linerless contacts

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 29, 2020
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Date of Patent
June 27, 2023
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Patent Application Number
17136595
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Patent Citations
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US Patent 8471343 Parasitic capacitance reduction in MOSFET by airgap ild
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US Patent 9362355 Nanosheet MOSFET with full-height air-gap spacer
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US Patent 9484250 Air gap contact formation for reducing parasitic capacitance
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US Patent 9666533 Airgap formation between source/drain contacts and gates
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US Patent 9768118 Contact having self-aligned air gap spacers
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US Patent 9761698 Air gap contact formation for reducing parasitic capacitance
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US Patent 9871121 Semiconductor device having a gap defined therein
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US Patent 7694413 Method of making a bottomless via
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US Patent 8361900 Barrier layer for copper interconnect
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11688632
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Patent Primary Examiner
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Theresa T Doan
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CPC Code
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H01L 21/76805
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H01L 21/7682
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H01L 21/76844
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H01L 21/7688
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H01L 21/76831
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H01L 21/76834
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H01L 21/76885
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H01L 21/76897
0
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H01L 21/76829
0

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