Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hui-Zhong Zhuang
Jiann-Tyng Tzeng
Guo-Huei Wu
Shih-Wei Peng
Wei-Cheng Lin
Date of Patent
October 10, 2023
Patent Application Number
17395148
Date Filed
August 5, 2021
Patent Citations
...
Patent Primary Examiner
Patent abstract
A method of forming an IC device includes creating a recess by removing at least a portion of a channel of a first transistor and a portion of a gate electrode, the gate electrode being common to the first transistor and an underlying second transistor. The method includes filling the recess with a dielectric material to form an isolation layer, and constructing a slot via overlying the isolation layer.
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