US Patent 11783109 IC device manufacturing method
Patent 11783109 was granted and assigned to Taiwan Semiconductor Manufacturing Company on October, 2023 by the United States Patent and Trademark Office.
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US Patent 11783109 IC device manufacturing method
Article
Patent abstract
A method of forming an IC device includes creating a recess by removing at least a portion of a channel of a first transistor and a portion of a gate electrode, the gate electrode being common to the first transistor and an underlying second transistor. The method includes filling the recess with a dielectric material to form an isolation layer, and constructing a slot via overlying the isolation layer.
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Guo-Huei Wu
Hui-Zhong Zhuang
Jiann-Tyng Tzeng
Shih-Wei Peng
Wei-Cheng Lin
Date of Patent
October 10, 2023
Patent Application Number
17395148
Date Filed
August 5, 2021
Patent Citations
Patent Primary Examiner
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